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Magnetron sputtering scanning method for modifying silicon carbide optical reflector surface and improving surface profile(授权发明)
王晋峰; 黄猛; 田杰; 王烨儒
2022-05-24
Rights Holder中国科学院南京天文光学技术研究所
Country美国
Subtype发明专利
Abstract

A magnetron sputtering scanning method for manufacturing a silicon carbide optical reflector surface modification layer and improving surface profile includes (1) for a silicon carbide plane mirror to be modified, first utilizing diamond micro-powders to grind and roughly polish an aspherical silicon carbide reflector with a conventional polishing or CCOS numerical control machining method; (2) after the surface profile precision of the silicon carbide reflector satisfies a modification requirement, utilizing a strip-shaped magnetron sputtering source to deposit a compact silicon modification layer on the surface of the silicon carbide reflector; (3) then, utilizing a circular sputtering source to modify and improve the surface profile of the reflector; and (4) finally, finely polishing the modification layer, and achieving the requirements for machining the surface profile and roughness of the reflector.

Subject Area天文技术与方法
Application Date2018-03-30
Patent NumberUS 11,339,468 B2
Language英语
Status已授权
Application NumberUS201816757819
Document Type专利
Identifierhttp://ir.niaot.ac.cn/handle/114a32/2029
Collection专利
中国科学院南京天文光学技术研究所知识成果
Affiliation南京天文光学技术研究所
Recommended Citation
GB/T 7714
王晋峰,黄猛,田杰,等. Magnetron sputtering scanning method for modifying silicon carbide optical reflector surface and improving surface profile(授权发明). US 11,339,468 B2[P]. 2022-05-24.
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File name: MAGNETRON SPUTTERING SCANNING METHOD FOR MODIFYING SILiCON__CARBIDE OPTICAL REFLECTOR SURFACE AND IMPROVING SURFACE PROFIL.pdf
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