Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce3+-Yb3+ | |
Talib Hussain1,2,3![]() ![]() ![]() | |
2016-05 | |
Source Publication | Chinese Physics Letters
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Volume | 33Issue:5Pages:058801-1-4 |
Abstract | ;
Ce3+-Yb3+ doped Y3A15O12 (YAG) is a luminescent down-conversion material which could convert visible photons to near infrared photons. In this work, YAG:Ce3+-Yb3+ is applied on the front surface of mass-produced mono crystalline Si solar cells. For the coated cells, the external quantum efficiency from the visible to the near infrared is improved, and the energy conversion efficiency enhances from 11.70% to 12.2% under AM1.5G. Furthermore, the phosphor down-conversion effect on the solar cell is characterized by the microwave detected photoconductivity technique on the n-type silicon wafer under the 977nm excitation. The down-conversion materials improve the average excess carrier lifetime from 22.5us to 24.2us and the average surface recombination velocity reduces from 424.5cm/s to 371.6 cm/s, which reveal the significant reduction in excess carrier recombination by the phosphors. |
Subject Area | 天文技术与方法 |
Language | 英语 |
Document Type | 期刊论文 |
Identifier | http://ir.niaot.ac.cn/handle/114a32/1353 |
Collection | 期刊论文 |
Affiliation | 1.南京天文光学技术研究所 2.中国科学院天文光学重点实验室 3.中国科学院大学 |
Recommended Citation GB/T 7714 | Talib Hussain,Hui-Qi Ye,Dong Xiao. Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce3+-Yb3+[J]. Chinese Physics Letters,2016,33(5):058801-1-4. |
APA | Talib Hussain,Hui-Qi Ye,&Dong Xiao.(2016).Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce3+-Yb3+.Chinese Physics Letters,33(5),058801-1-4. |
MLA | Talib Hussain,et al."Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce3+-Yb3+".Chinese Physics Letters 33.5(2016):058801-1-4. |
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