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Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce3+-Yb3+
Talib Hussain1,2,3; Hui-Qi Ye1,2; Dong Xiao1,2,3
2016-05
Source PublicationChinese Physics Letters
Volume33Issue:5Pages:058801-1-4
Abstract
;
Ce3+-Yb3+ doped Y3A15O12 (YAG) is a luminescent down-conversion material which could convert visible photons to near infrared photons. In this work, YAG:Ce3+-Yb3+ is applied on the front surface of mass-produced mono crystalline Si solar cells.

For the coated cells, the external quantum efficiency from the visible to the near infrared is improved, and the energy conversion efficiency enhances from 11.70% to 12.2% under AM1.5G.

Furthermore, the phosphor down-conversion effect on the solar cell is characterized by the microwave detected photoconductivity technique on the n-type silicon wafer under the 977nm excitation.

The down-conversion materials improve the average excess carrier lifetime from 22.5us to 24.2us and the average surface recombination velocity reduces from 424.5cm/s to 371.6 cm/s, which reveal the significant reduction in excess carrier recombination by the phosphors.
Subject Area天文技术与方法
Language英语
Document Type期刊论文
Identifierhttp://ir.niaot.ac.cn/handle/114a32/1353
Collection中国科学院南京天文光学技术研究所_期刊论文
中科院天文光学技术重点实验室_期刊论文
Affiliation1.南京天文光学技术研究所
2.中国科学院天文光学重点实验室
3.中国科学院大学
Recommended Citation
GB/T 7714
Talib Hussain,Hui-Qi Ye,Dong Xiao. Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce3+-Yb3+[J]. Chinese Physics Letters,2016,33(5):058801-1-4.
APA Talib Hussain,Hui-Qi Ye,&Dong Xiao.(2016).Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce3+-Yb3+.Chinese Physics Letters,33(5),058801-1-4.
MLA Talib Hussain,et al."Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce3+-Yb3+".Chinese Physics Letters 33.5(2016):058801-1-4.
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